GASSOUMIA, M. . . . .; TOMSAH, I. Experimental Investigation of Parasitic Effects in High Electron Mobility AlGaN/GaN Heterostructure Grown on Si(111) Substrate . Journal of Qassim University for Science, [S. l.], v. 9, n. 1, p. 83–93, 2016. Disponível em: https://jnsm.qu.edu.sa/index.php/jnm/article/view/1785. Acesso em: 21 nov. 2024.