GASSOUMI , M. . Electrically Active Defects in 4H-SiC Schottky Barrier Diodes Characterization by DLTS System. Journal of Qassim University for Science, [S. l.], v. 9, n. 1, p. 95–106, 2016. Disponível em: https://jnsm.qu.edu.sa/index.php/jnm/article/view/1786. Acesso em: 21 nov. 2024.