Gassoumi , M. “Electrically Active Defects in 4H-SiC Schottky Barrier Diodes Characterization by DLTS System”. Journal of Qassim University for Science 9, no. 1 (January 1, 2016): 95–106. Accessed September 20, 2024. https://jnsm.qu.edu.sa/index.php/jnm/article/view/1786.