Gassoumia M, Tomsah I. Experimental Investigation of Parasitic Effects in High Electron Mobility AlGaN/GaN Heterostructure Grown on Si(111) Substrate . JQUS [Internet]. 2016 Jan. 1 [cited 2024 Nov. 21];9(1):83-9. Available from: https://jnsm.qu.edu.sa/index.php/jnm/article/view/1785