Gassoumi M. Electrically Active Defects in 4H-SiC Schottky Barrier Diodes Characterization by DLTS System. JQUS [Internet]. 2016 Jan. 1 [cited 2024 Sep. 20];9(1):95-106. Available from: https://jnsm.qu.edu.sa/index.php/jnm/article/view/1786