Experimental Investigation of Parasitic Effects in High Electron Mobility AlGaN/GaN Heterostructure Grown on Si(111) Substrate

Abstract

AlGaN/GaN High Electron Mobility Transistors (HEMTs) with silicon (111) substrates reveal some anomalies (parasitic) like kink effect, hysteresis phenomena and degradation in saturation current on Ids-Vds and Ids-Vgs as a function of temperature. These anomalies on output characteristics changes when we vary measurement conditions (temperature, polarisation, stress...). These parasitic effects can be attributed to the presence of deep- level on the hetero-structure.