Electrically Active Defects in 4H-SiC Schottky Barrier Diodes Characterization by DLTS System

M. Gassoumi
M.Gassoumi@qu.edu.sa (Primary Contact)
Department of Physics, College of Science, Qassim University, Buraidah 51452, Saudi Arabia.bUniversityof Monastir, Laboratory of Micro-Optoelectronics and Nanostructures, Monastir 5000, Tunisia
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Abstract

Ti/Pt/Au 4H-SiC Schottky barrier diode (SBD) has been characterized by the capacitance– voltage (C–V) technique as a function of temperature (40–310 K). The barrier height (BH) was determined as 2.45eV at the temperature of 300 K and frequency of 50 kHz from C–V measurements, respectively. Deep level transient spectroscopy (DLTS) has been used to investigate deep levels in Ti/Pt/Au 4H-SiC SBD. The five electron trap centers to be present at temperatures 251, 223, 183, 127, and 98K have been realized. The origin of these defects has been decided to be intrinsic nature and it has been found the correlation between C–V and DLTS measurements quite interesting.

Table of Contents
Gassoumi , M. . (2016). Electrically Active Defects in 4H-SiC Schottky Barrier Diodes Characterization by DLTS System. Journal of Qassim University for Science, 9(1), 95–106. Retrieved from https://jnsm.qu.edu.sa/index.php/jnm/article/view/1786
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