In this paper, the improved exp-function method is proposed to solve fractional differential equations. The method is applied to solve the space-time fractional Kaup–Kupershmidt equation, space-time fractional shallow water equation, and space-time fractional Boussinesq equation. Among these solutions, some are found for the first time.

This paper deals with obtaining the set of efficient and non-dominatedfront solutions for the stochastic multicriterion programming problem(SMCPP) with random variables in both the objective functions and the right-hand side of the constraints. In this work, suggested approach uses the statistical inference in two stages, in one of them, The SMCPP is transformed into an equivalent deterministic multicriterion programming problem (DMCPP), then, in the other one, the nonnegative weighted sum approach will be applied to transform the multicriterion programming problem into a single objective programming problem.An illustrative example is presented to show the realistic implementation of the suggested approach

 The oxidation states of cobalt in FA color center at the low coordination (001) surface of AgBr play important roles in laser light generation and color image formation. These two applications are investigated simultaneously by using quantum mechanical ab initio methods. Quantum clusters of variable sizes were embedded in the simulated Coulomb fields that closely approximate the Madelung fields of the host surface and the nearest neighbors ions to the FA defect sites were allowed to relax to equilibrium. The calculated Stokes shifts suggest that laser light generation is sensitive to the simultaneous effects of the oxidation state of cobalt and the choice of the basis set centered on the anion vacancy. All relaxed excited states of the defect-containing surfaces were deep below the lower edges of the conduction bands of the ground state defect-free surfaces, suggesting that FA: Co+2 and Co+3 color centers are suitable laser defects. The dependence of the orientational destruction, recording sensitivity andexciton (energy) transfer on the oxidation state of cobalt is clarified. The Glasner-Tompkins empirical rule is generalized to include the oxidation state of the impurity cation. As far as color image formation is concerned, the supersensitizer was found to increase the sensitizing capabilities of two primary dyes in the excited states by increasing the relative yield of quantum efficiency. The Co+3 surfaces of AgBr are significantly more sensitive than the corresponding Co+2 surfaces. On the basis of quasi Fermi levels, the difference in the sensitizing capabilites between the examined dyes in the excited states is determined.

In the search for new half-metallic spintronics materials, with high spin polarization at room temperature, we have studied novel platinum double perovskite oxides Sr2CoPtO6 and Sr2NiPtO6. The structural, electronic, magnetic properties have been studied by using the self-consistent full-potential linear muffin-tin orbital (FP-LMTO) ab-initio method. Calculations are performed by mean of the localspin-density approximation plus Hubbard parameter (LSDA+U) method. Our results of density of states predict a half-metallic ferrimagnetic (HM-FiM) character with total spin magnetic moments of 3.5 μB and 3.0 μB per unit cell for Sr2CoPtO6 and Sr2NiPtO6, respectively. It is established that the FiM character is attributed to both the superexchange (SE) mechanism and localized double exchange (DE) mechanism via the pdd-π Co/Ni (eg) – O – (2pπ) – Pt (eg) coupling and the latter is also believed to be the origin of the high spin polarization of Sr2CoPtO6 and Sr2NiPtO6.

AlGaN/GaN High Electron Mobility Transistors (HEMTs) with silicon (111) substrates reveal some anomalies (parasitic) like kink effect, hysteresis phenomena and degradation in saturation current on Ids-Vds and Ids-Vgs as a function of temperature. These anomalies on output characteristics changes when we vary measurement conditions (temperature, polarisation, stress...). These parasitic effects can be attributed to the presence of deep- level on the hetero-structure.

Ti/Pt/Au 4H-SiC Schottky barrier diode (SBD) has been characterized by the capacitance– voltage (C–V) technique as a function of temperature (40–310 K). The barrier height (BH) was determined as 2.45eV at the temperature of 300 K and frequency of 50 kHz from C–V measurements, respectively. Deep level transient spectroscopy (DLTS) has been used to investigate deep levels in Ti/Pt/Au 4H-SiC SBD. The five electron trap centers to be present at temperatures 251, 223, 183, 127, and 98K have been realized. The origin of these defects has been decided to be intrinsic nature and it has been found the correlation between C–V and DLTS measurements quite interesting.